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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3164
DESCRIPTION With TO-247 package Switching power transistor High breakdown voltage
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-247) and symbol DESCRIPTION
Absolute maximum ratings(Tc=25ae )
SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg
Collector-base voltage
Collector-emitter voltage

PARAMETER
CONDITIONS Open emitter Open base
CHA IN
Base current
Emitter-base voltage
Collector current (DC)
E SEM NG
TC=25ae
OND IC
TOR UC
VALUE 500 400 7 10 4 100 150 -55~150
UNIT V V V A A W ae ae
Open collector
Total power dissipation Junction temperature Storage temperature
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.25 UNIT ae /W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3164
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT
SYMBOL
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A; IB=0
400
V
VCEsat
Collector-emitter saturation voltage
IC=5A ;IB=1A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=1A
1.5
V
ICBO
Collector cut-off current At rated voltage 0.1 mA
ICEO
Collector cut-off current
IEBO
Emitter cut-off current
At rated voltage
0.1
mA
hFE-1
DC current gain
hFE-2
fT
DC current gain

IC=5A ; VCE=2V
15
CHA IN
Transition frequency
E SEM NG
IC=1mA ; VCE=2V
IC=0.6A ; VCE=10V
OND IC
5
TOR UC
20 MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3164

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 Outline dimensions
3


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